Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market Size to register a growth of 18.6% CAGR
According to a new report LAMEA Gallium Nitride (GaN) Semiconductor Devices Market, published by KBV research, the LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Size would witness market growth of 18.6% CAGR during the forecast period (2017 – 2023).
The Brazil market holds the largest market share in LAMEA 4 inch Gallium Nitride Semiconductor Devices Market by Country in 2016, and would continue to be a dominant market till 2023growing at a CAGR of 17.2 % during the forecast period. The Argentina market is expected to witness a CAGR of 19.1% during (2017 – 2023) in LAMEA 2 inch Gallium Nitride Semiconductor Devices Market. Additionally, The UAE market is expected to witness a CAGR of 18.2% during (2017 – 2023) in LAMEA 8 inch Gallium Nitride Semiconductor Devices Market.
The Information & Communication Technology market holds the largest market share in Nigeria Gallium Nitride Semiconductor Devices Market by Application in 2016, and would continue to be a dominant market till 2023; growing at a CAGR of 18.3 % during the forecast period. The Automotive market is expected to witness a CAGR of 19.5% during (2017 – 2023). Additionally, The Healthcare market would attain market value of $1.3 million by 2023.
Full Report: https://www.marketresearchandstatistics.com/ad/lamea-gallium-nitride-gan-semiconductor-devices-market/
The market research report has exhaustive quantitative insights providing a clear picture of the market potential in various segments across the countries in the region. The key impacting factors of the Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market have been discussed in the report with the competitive analysis and elaborated company profiles of NextGen Power Systems, Inc., Cree, Inc. (Wolfspeed), Efficient Power Conversion Corporation, Inc., GaN Systems, Inc., Toshiba Corporation,Fujitsu Limited,NXP Semiconductors N.V., Texas Instruments Incorporated, Infineon Technologies AG, and Qorvo, Inc.
LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Size Segmentation
By Product Type
- Opto-Semiconductors
- Power Semiconductors
- GaN Radio Frequency Devices
By Wafer Size
- 4 inch
- 2 inch
- 8 inch
- 6 inch
By Application
- Information & Communication Technology
- Consumer Electronics
- Aerospace & Defense
- Automotive
- Industrial & Power
- Healthcare
- Others
By Country
- Brazil Gallium Nitride (GaN) Semiconductor Devices Market
- Argentina Gallium Nitride (GaN) Semiconductor Devices Market
- UAE Gallium Nitride (GaN) Semiconductor Devices Market
- Saudi Arabia Gallium Nitride (GaN) Semiconductor Devices Market
- South Africa Gallium Nitride (GaN) Semiconductor Devices Market
- Nigeria Gallium Nitride (GaN) Semiconductor Devices Market
- Rest of Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market
Companies Profiled
- NextGen Power Systems, Inc.
- Cree, Inc. (Wolfspeed)
- Efficient Power Conversion Corporation, Inc.
- GaN Systems, Inc.
- Toshiba Corporation
- Fujitsu Limited
- NXP Semiconductors N.V.
- Texas Instruments Incorporated
- Infineon Technologies AG
- Qorvo, Inc.
Unique Offerings from KBV Research
- Exhaustive coverage of LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Size
- Highest number of market tables and figures
- Subscription based model available
- Guaranteed best price
- Assured post sales research support with 10% customization free
Related Reports:
Global Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)
North America Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)
Europe Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)
Asia Pacific Gallium Nitride (GaN) Semiconductor Devices Market (2017-2023)
